%0 Conference Proceedings %T CPW self-resetting power limiting devices based on microwave power induced semiconductor-metal transition in vanadium dioxide %+ MINACOM %+ Axe 2 : procédés de traitements de surface %A Crunteanu, Aurelian %A Givernaud, Julien %A Champeaux, Corinne %A Catherinot, Alain %A Pothier, Arnaud %A Blondy, Pierre %< avec comité de lecture %( IEEE MTT-S Int. Microwave Symposium 2009 %B IEEE MTT-S Int. Microwave Symposium 2009 %C Boston, United States %3 IEEE MTT-S %P 109-112 %8 2009-06-07 %D 2009 %R 10.1109/MWSYM.2009.5165644Conference papers %X We present a novel concept of microwave power limiting devices (reversible self-resetting fuses and power limiters) based on reversible semiconductor-to-metal transition (SMT) of vanadium dioxide thin films integrated on coplanar waveguide transmission lines (CPW). We designed, simulated and fabricated devices which can be reversibly driven from a low-loss (<0.7 dB) transmission state into a high-loss state (attenuation higher than 32 dB from 100 MHz to 40 GHz) as the VO2 material is changing from semiconductor to metal when the incident microwave power exceed a threshold value. These simple devices can be easily integrated as broadband protection circuits from excess power or DC transients for a large variety of RF and microwave components %G English %L hal-00437606 %U https://unilim.hal.science/hal-00437606 %~ UNILIM %~ CNRS %~ SPCTS %~ SPCTS-AXE2 %~ XLIM %~ XLIM-MINACOM %~ IPAM %~ INC-CNRS %~ IRCER %~ IRCER-AXE2 %~ IMPEO %~ TEST2-HALCNRS