%0 Conference Proceedings %T High-Efficiency Power Amplifier MMICs in 100 nm GaN Technology at Ka-band frequencies %+ C2S2 (XLIM-C2S2) %+ XLIM (XLIM) %+ Fraunhofer Institute for Applied Solid State Physics (Fraunhofer IAF) %A Chéron, Jérôme %A Campovecchio, Michel %A Quéré, Raymond %A Schwantuschke, Dirk %A Quay, Ruediger %A Ambacher, Oliver %< avec comité de lecture %( 8th European Microwave Integrated Circuits Conference (EuMIC), European Microwave Week (EuMW) %B 8th European Microwave Integrated Circuits Conference (EuMIC), European Microwave Week (EuMW) %C Nuremberg, Germany %P 492-495 %8 2013-10 %D 2013 %Z Engineering Sciences [physics]/ElectronicsConference papers %X Three power amplifier MMICs at Ka-band frequencies are reported in this paper. The MMICs are realized using AlGaN/GaN HEMTs with a gate length of 100 nm. Two single-stage amplifiers are presented to highlight the potential of this GaN technology. A dual-stage amplifier is designed to reach high power performances. In continuous-wave (CW) operation, MMICs have provided up to 1.4 W, 2.4 W and 4.7 W of output power associated with (in this order) 41%, 33%, and 28% of PAE, respectively. The dual-stage MMIC delivered an output power higher than 4 W, associated with 27% of PAE and 9.8 dB of power gain from 29 GHz to 31 GHz. %G English %L hal-00911618 %U https://unilim.hal.science/hal-00911618 %~ UNILIM %~ CNRS %~ XLIM %~ XLIM-C2S2