Dielectric material characterization techniques and designs of high-Q resonators for applications from micro to millimeter-waves frequencies applicable at room and cryogenic temperatures - Université de Limoges Accéder directement au contenu
Article Dans Une Revue Review of Scientific Instruments Année : 2014

Dielectric material characterization techniques and designs of high-Q resonators for applications from micro to millimeter-waves frequencies applicable at room and cryogenic temperatures

Georges Humbert
Denis Férachou
  • Fonction : Auteur
  • PersonId : 914932
Michel Aubourg
  • Fonction : Auteur
  • PersonId : 915586
Valérie Madrangeas
Dominique Cros
Jean-Marc Blondy
  • Fonction : Auteur
  • PersonId : 914930

Résumé

Dielectric resonators are key elements in many applications in micro to millimeter wave circuits, including ultra-narrow band filters and frequency-determining components for precision frequency synthesis. Distributed-layered and bulk low-loss crystalline and polycrystalline dielectric structures have become very important for building these devices. Proper design requires careful electromagnetic characterization of low-loss material properties. This includes exact simulation with precision numerical software and precise measurements of resonant modes. For example, we have developed the Whispering Gallery mode technique for microwave applications, which has now become the standard for characterizing low-loss structures. This paper will give some of the most common characterization techniques used in the micro to millimeter wave regime at room and cryogenic temperatures for designing high-Q dielectric loaded cavities.
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Dates et versions

hal-00967041 , version 1 (27-03-2014)

Identifiants

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Jean-Michel Le Floch, Yahoui Fan, Georges Humbert, Qingxiao Shan, Denis Férachou, et al.. Dielectric material characterization techniques and designs of high-Q resonators for applications from micro to millimeter-waves frequencies applicable at room and cryogenic temperatures. Review of Scientific Instruments, 2014, 85 (3), pp.031301. ⟨10.1063/1.486746⟩. ⟨hal-00967041⟩

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