@inproceedings{ayari:hal-01286576, TITLE = {{Experimental time-domain evaluation and simulation of high power GaN HEMTS for RF Doherty Amplifier design}}, AUTHOR = {Ayari, Lotfi and Neveux, Guillaume and Barataud, Denis and Ayad, Mohammed and Byk, Estelle and Chang, Christophe and Camiade, Marc}, URL = {https://unilim.hal.science/hal-01286576}, BOOKTITLE = {{Microwave Integrated Circuits Conference (EuMIC), 2015 10th European}}, ADDRESS = {PARIS, France}, ORGANIZATION = {{IEEE}}, PUBLISHER = {{IEEE}}, NUMBER = {15707962}, PAGES = {361-364}, YEAR = {2015}, MONTH = Sep, DOI = {10.1109/EuMIC.2015.7345144}, KEYWORDS = {III-V semiconductors gallium compounds high electron mobility transistors radiofrequency power amplifiers wide band gap semiconductors}, HAL_ID = {hal-01286576}, HAL_VERSION = {v1}, }