%0 Conference Proceedings %T Experimental time-domain evaluation and simulation of high power GaN HEMTS for RF Doherty Amplifier design %+ C2S2 (XLIM-C2S2) %+ United Monolithic Semiconductors SAS (UMS) %A Ayari, Lotfi %A Neveux, Guillaume %A Barataud, Denis %A Ayad, Mohammed %A Byk, Estelle %A Chang, Christophe %A Camiade, Marc %< avec comité de lecture %B Microwave Integrated Circuits Conference (EuMIC), 2015 10th European %C PARIS, France %I IEEE %N 15707962 %P 361-364 %8 2015-09-07 %D 2015 %R 10.1109/EuMIC.2015.7345144 %K III-V semiconductors gallium compounds high electron mobility transistors radiofrequency power amplifiers wide band gap semiconductors %Z Engineering Sciences [physics]/Electronics %Z Engineering Sciences [physics]/Micro and nanotechnologies/MicroelectronicsConference papers %X This paper presents an automatized, on-wafer time-domain active load-pull set-up developed for a Doherty-oriented characterization of High Power GaN High-Electron Mobility Transistors (HEMTs). From the on-wafer measured Time-Domain Waveforms (TDW) acquisition, all data required for the design of a Doherty Power Amplifier (DPA) are then directly extracted. With this measurement process, designers have then the direct knowledge of the optimal characteristics of high power transistors along the Output Back-Off (OBO). They also can deduce the maximum obtainable operating bandwidth of the final Doherty PA. Simultaneously to this measurement process, simulations based on the use of non-linear foundry electro-thermal model have also been performed to prove the validity of the method to predict Power Added Efficiency (PAE) performances versus OBO. Measurement and simulations have been applied to an 8×125μm AlGaN/GaN GH25 transistor from UMS foundry. %G English %L hal-01286576 %U https://unilim.hal.science/hal-01286576 %~ UNILIM %~ CNRS %~ XLIM %~ XLIM-C2S2