%0 Journal Article %T Hot small-signal S-parameter measurements of power transistors operating under large-signal condition in a load-pull environment for the study of nonlinear parametric interactions %+ Institut de Recherche en Communications Optiques et Microondes (IRCOM) %A Gasseling, T. %A Barataud, Denis %A Mons, Sébastien %A Nebus, Jean-Michel %A Villotte, Jean-Pierre %A Obregon, Juan %A Quéré, Raymond %< avec comité de lecture %@ 0018-9480 %J IEEE Transactions on Microwave Theory and Techniques %I Institute of Electrical and Electronics Engineers %V 52 %N 3 %P 805-812 %8 2004-03-01 %D 2004 %R 10.1109/TMTT.2004.823528 %Z Engineering Sciences [physics]/Electronics %Z Engineering Sciences [physics]/Micro and nanotechnologies/MicroelectronicsJournal articles %X This paper presents a setup that enables wide-band (in-band and out-of-band) measurements of hot small-signal S-parameters of nonlinear devices driven by a large-signal single tone (namely, the pump signal). A load-pull characterization is performed at the pump frequency (F0), while hot small-signal S-parameters are measured with a perturbating signal at a frequency (f) by the use of a probe tone. Basically, the frequency of the probe tone is swept over a wide bandwidth (at the present time from 300 MHz up to F0/2). A higher frequency range, from near dc to KF0, will be implemented in a similar manner. The measurement setup reported here is applied to on-wafer measurements of S-band HBTs. Hot small-signal S-parameter measurements versus large-signal load impedance and pump level will be shown. An application to the prediction of parametric oscillations will be demonstrated. A parametric oscillation predicted at 373 MHz is confirmed by spectrum measurements. %G English %L hal-01287616 %U https://unilim.hal.science/hal-01287616 %~ UNILIM %~ CNRS %~ XLIM