Communication Dans Un Congrès Année : 2018

On-wafer time-domain characterization of power GaN HEMTs for accurate nonlinear modeling of thermal and trapping effects and their impacts on pulse to pulse reliability

Audrey Martin
Guillaume Neveux
Denis Barataud

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hal-01741097 , version 1 (22-03-2018)

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  • HAL Id : hal-01741097 , version 1

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Seifeddine Fakhfakh, Marwen Ben Sassi, Audrey Martin, Guillaume Neveux, Denis Barataud, et al.. On-wafer time-domain characterization of power GaN HEMTs for accurate nonlinear modeling of thermal and trapping effects and their impacts on pulse to pulse reliability. Workshop on "Reliability of microwave components and electronic systems", Microwave & RF 2018, Mar 2018, PARIS, France. ⟨hal-01741097⟩
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