Optimized nc-Si:H thin films with enhanced optoelectronic properties prepared by micro-waves PECVD used as an effective silicon surface passivation layer - Université de Limoges
Article Dans Une Revue Journal of Materials Science: Materials in Electronics Année : 2019

Optimized nc-Si:H thin films with enhanced optoelectronic properties prepared by micro-waves PECVD used as an effective silicon surface passivation layer

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https://unilim.hal.science/hal-02172223

Soumis le : mercredi 3 juillet 2019-15:51:31

Dernière modification le : jeudi 11 avril 2024-13:08:15

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hal-02172223 , version 1 (03-07-2019)

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Seif El Whibi, Lotfi Derbali, Pascal Tristant, Cédric Jaoul, Maggy Colas, et al.. Optimized nc-Si:H thin films with enhanced optoelectronic properties prepared by micro-waves PECVD used as an effective silicon surface passivation layer. Journal of Materials Science: Materials in Electronics, 2019, 30 (3), pp.2351-2359. ⟨10.1007/s10854-018-0508-9⟩. ⟨hal-02172223⟩

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