Recherche - Université de Limoges Accéder directement au contenu

Filtrer vos résultats

6 Résultats
authFullName_s : A. Tomkeviciene

Comparative study of 2,7 versus 3,6 disubstituted carbazole as hole transporting materials in solid state DSSC

Martial Degbia , Bruno Schmaltz , François Tran Van , Hussein Melhem , Johann Bouclé , et al.
IEEE International Semiconductor Conference, Sep 2012, Dresden, Germany. pp.211 - 214, ⟨10.1109/ISCDG.2012.6360014⟩
Communication dans un congrès hal-01073792v1

Carbazole-based molecular glasses for efficient solid-state dye-sensitized solar cells

G. Puckyte , Bruno Schmaltz , A. Tomkeviciene , M. Degbia , J.V. Grazulevicius , et al.
Journal of Power Sources, 2013, 233, pp.86-92. ⟨10.1016/j.jpowsour.2013.01.137⟩
Article dans une revue hal-00909061v1

Star-shaped carbazole derivative based efficient solid-state dye sensitized solar cell

Asta Michaleviciute , M. Degbia , A. Tomkeviciene , Bruno Schmaltz , Egle Gurskyte , et al.
Journal of Power Sources, 2014, 253, pp.230-238. ⟨10.1016/j.jpowsour.2013.12.039⟩
Article dans une revue hal-00938045v1

Diphenylamino-substituted derivatives of 9-phenylcarbazole as glass-forming hole-transporting materials for solid state dye sensitized solar cells

A. Tomkeviciene , G. Puckyte , J.V. Grazulevicius , M. Degbia , François Tran Van , et al.
Synthetic Metals, 2012, 162, pp.1997-2004. ⟨10.1016/j.synthmet.2012.10.002⟩
Article dans une revue istex hal-00913562v1

New carbazole-based molecular glasses for 3.4% efficient solid-state dye-sensitized solar cells

B. Schmaltz , M. Degbia , G. Puckyte , A. Tomkeviciene , J.V. Grazulevicius , et al.
European Material Research Society (E-MRS), May 2012, Strasbourg, France. Symposium H
Communication dans un congrès hal-00734872v1

Comparative study of 2,7 versus 3,6 disubstituted carbazole as hole transporting materials in solid state DSSC

M. Degbia , Bruno Schmaltz , François Tran Van , Hussein Melhem , Johann Bouclé , et al.
IEEE International semiconductor conference, Dresden, France. 6360014, pp.211-214, 2012, IEEE International semiconductor conference ⟨10.1109/ISCDG.2012.6360014⟩
Proceedings/Recueil des communications hal-00916145v1