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triés par
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Wideband 50W Packaged GaN HEMT With Over 60% PAE Through Internal Harmonic Control in S-BandIEEE MTT-S Digest, IMS 2012, Jun 2012, Montréal -Canada, United States. pp.TH2D-2
Communication dans un congrès
hal-00707898v1
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Over 70% PAE packaged GaN HEMT through wideband internal matching at second harmonic in S-bandElectronics Letters, 2012, 48 (13), pp.770-772. ⟨10.1049/el.2012.1654⟩
Article dans une revue
hal-00793351v1
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Design of HEMT GaN power amplifiers with wideband control of 2nd harmonic impedances in S-Band5th European Conference on Microwave Integrated Circuits (EuMIC), Sep 2010, Paris, France. pp.1-4
Communication dans un congrès
hal-00547740v1
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Modélisation du drain-lag dans des modèles électriques grand-signaux de transistors HEMTs AlGaN/GaN15èmes Journées Nationales Microondes, May 2007, TOULOUSE, France
Communication dans un congrès
hal-00194560v1
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A drain-Lag Model for AlGaN/GaN Power HEMTSIEEE MTT - IMS, 2007, Honolulu, Hawaii, United States. pp.601-604
Communication dans un congrès
hal-00194581v1
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Mise en oeuvre d'un boîtier d'un transistor GaN optimisé haut rendement (70% PAE) et large bande (1GHz) en bande S17eme Journées Nationales Micro-ondes (JNM), May 2011, Brest, France. Papier 6E13
Communication dans un congrès
hal-00700764v1
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Design Method of Balanced AlGaN/GaN HEMT Cascode Cells for Wideband Distributed Power AmplifiersInternational Journal of the EuMA (European Microwave Association), 2008, 4 (4), pp.261-267
Article dans une revue
hal-00703335v1
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Balanced AlGaN/GaN HEMT cascode cells: A design method for wideband distributed amplifiers.Electronics Letters, 2008, vol. 44, pp. 116-118
Article dans une revue
hal-00305190v1
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Design of GaN-based balanced cascode cells for wide-band distributed power amplifier.Microwave Integrated Circuit Conference, 2007. EuMIC 2007. European, Oct 2007, Munich, Germany. pp.154-157, ⟨10.1109/EMICC.2007.4412671⟩
Communication dans un congrès
hal-00197322v1
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An Electrothermal Model for GaInP/GaAs Power HBTs with Enhanced Convergence CapabilitiesEuropean Microwave Integrated Circuits Conference, 2006. The 1st, Sep 2009, Manchester, United Kingdom. pp. 296-299, ⟨10.1109/EMICC.2006.282811⟩
Communication dans un congrès
hal-00660626v1
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Wideband harmonic control of high efficiency high power GaN amplifiers in S-Band and power packaging issuesMOD Round Table Workshop on GaN Component Technologies, ESTEC, Sep 2010, Noordwijk, Netherlands. pp.2-5
Communication dans un congrès
hal-00607002v1
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Harmonic Control In Package of Power GaN Transistors for High Efficiency and Wideband Performances in S-Band41st European Microwave Conference, EuMW 2011, Oct 2011, Manshester, United Kingdom. pp.1111-1114
Communication dans un congrès
hal-00701038v1
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Design and Modeling Method of Package for Power GaN HEMTs to Limit the Input Matching SensitivityIntegrated Nonlinear Microwave and Millimetre-wave Circuits (INMMIC 2011, Apr 2011, Vienne, Austria. pp.81-84, ⟨10.1109/INMMIC.2011.5773327⟩
Communication dans un congrès
hal-00660836v1
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State of the Art 58W, 38% PAE X-Band AlGaN/GaN HEMTs microstrip MMIC AmplifiersIEEE Compound Semiconductor IC Symposium CSICS 2008, Oct 2008, United States. pp 1- 4
Communication dans un congrès
hal-00918252v1
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