Nonlinear RF caracterization and modelling of heterojonction bipolar transistors under pulsed conditions
Jean-Pierre Viaud
,
Raphaël Sommet
,
Jean-Pierre Teyssier
,
Didier Floriot
,
Raymond Quéré
24 th European Microwawe Conference - CANNES , 1994, Unknown, Unknown Region. pp.1610--1615
Communication dans un congrès
hal-01280055v1
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Characterization and modeling of bias dependent breakdown and self-heating in GaInP/GaAs power HBT to improve high power amplifier design
Sylvain Heckmann
,
Raphaël Sommet
,
Jean-Michel Nebus
,
Jean-Claude Jacquet
,
Didier Floriot
,
et al.
IEEE Transactions on Microwave Theory and Techniques , 2002, 50 (12), pp.2811--2819
Article dans une revue
hal-01279572v1
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Numerical simulation and characterization of trapping noise in InGaP-GaAs heterojunctions devices at high injection
Jean-Christophe Nallatamby
,
Khaled Abdelhadi
,
Jean-Claude Jacquet
,
Michel Prigent
,
Didier Floriot
,
et al.
Solid-State Electronics , 2013, 81, pp.35-44
Article dans une revue
hal-00911139v1
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Méthode rigoureuse de simulation du bruit GR assisté par piège dans les composants semi-conducteurs : Application à des TBH en technologie GaInP/GaAs
Khaled Abdelhadi
,
Ahmad Al Hajjar
,
Jean-Christophe Nallatamby
,
Jean-Claude Jacquet
,
Sylvain Delage
,
et al.
18èmes Journées Nationales Microondes , May 2013, Paris, France
Communication dans un congrès
hal-00914669v1
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CAD oriented design methods of frequency multipliers. Application to a Millimeterwave MMIC PHEMT tripler and a microwave HBT doubler
Béatrice Thibaud
,
Denis Barataud
,
Michel Campovecchio
,
Jean-Michel Nebus
,
Sylvie Tranchant
,
et al.
IEEE MTT-S, International Symposium on Microwave Theory and Techniques , Jun 1999, Anaheim, CA, United States. pp.1747-1750,
⟨10.1109/MWSYM.1999.780309⟩
Communication dans un congrès
hal-01069754v1
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A Comparison of 2-D Simulations and Measurements of Low Frequency Noise on InGaP/GaAs HBT Transistors at Low and High Level Injection
Khaled Abdelhadi
,
Ahmad Al Hajjar
,
Jean-Christophe Nallatamby
,
Jean-Claude Jacquet
,
Sylvain Delage
,
et al.
International Conference on Noise and Fluctuations , Jun 2013, Montpellier, France
Communication dans un congrès
hal-00914665v1
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Low-Frequency Noise Characterization in GaN HEMTs: Investigation of Deep Levels and Their Physical Properties
Nandha Kumar Subramani
,
Julien Couvidat
,
Ahmad Al Hajjar
,
Jean-Christophe Nallatamby
,
Didier Floriot
,
et al.
Article dans une revue
hal-01661735v1
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Wideband harmonically matched packaged GaN HEMTs with high PAE performances at S-band frequencies
Jérôme Chéron
,
Michel Campovecchio
,
Denis Barataud
,
Tibault Reveyrand
,
Michel Stanislawiak
,
et al.
Article dans une revue
hal-00911156v1
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An active pulsed RF and pulsed DC load-pull system for the characterization of H.B.T. power transistors used in coherent radar and communication systems
Caroline Arnaud
,
Denis Barataud
,
Jean-Michel Nebus
,
Jean-Pierre Teyssier
,
Jean-Pierre Villotte
,
et al.
IEEE Transactions on Microwave Theory and Techniques , 2000, 48 (12), pp.2625-2629.
⟨10.1109/22.899022⟩
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hal-01287615v1
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Design of a 55 W Packaged GaN HEMT with 60% PAE by Internal Matching in S-Band.
Jérôme Chéron
,
Michel Campovecchio
,
Denis Barataud
,
Tibault Reveyrand
,
Sébastien Mons
,
et al.
Communication dans un congrès
hal-00793469v1
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Electrical modeling of packaged GaN HEMT dedicated to internal power matching in S-band
Jérôme Chéron
,
Michel Campovecchio
,
Denis Barataud
,
Tibault Reveyrand
,
Michel Stanislawiak
,
et al.
Article dans une revue
hal-00793353v1
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Wideband Power Performance Evaluation of AlGaN/GaN PHEMTs
Sandra Demeyer
,
Audrey Martin
,
Michel Campovecchio
,
Didier Floriot
,
Raymond Quéré
Workshop on "Power Amplifier Design and Characterization" Hyper 2005 , Mar 2005, Paris, France
Communication dans un congrès
hal-01067140v1
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A non-quasi-static model of GaInP/GaAs HBT for power applications
Jean-Philippe Fraysse
,
Didier Floriot
,
Philippe Auxemery
,
Michel Campovecchio
,
Raymond Quéré
,
et al.
IEEE MTT-S International Microwave Symposium on Microwave Theory and Techniques , Jun 1997, Denver, CO, United States. pp. 379-382,
⟨10.1109/MWSYM.1997.602813⟩
Communication dans un congrès
hal-01067827v1
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Modelling of a 4-18GHz 6W flip-chip integrated power amplifier based on GaN HEMTs technology
Sandra Demeyer
,
Audrey Philippon
,
Michel Campovecchio
,
Christophe Charbonniaud
,
Stéphane Piotrowicz
,
et al.
Communication dans un congrès
hal-01070012v1
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A design method for high efficiency class F HBT amplifiers
Alain Mallet
,
Thierry Peyretaillade
,
Raphaël Sommet
,
Didier Floriot
,
Sylvain Delage
,
et al.
Microwave Symposium Digest, 1996., IEEE MTT-S International , 1996, Unknown, Unknown Region. pp.855--858 vol.2
Communication dans un congrès
hal-01279783v1
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Comprehensive analysis of GR noise in InGaP–GaAs HBT by physics-based simulation and low frequency characterization
Jean-Christophe Nallatamby
,
Sylvain Laurent
,
Michel Prigent
,
Jean-Claude Jacquet
,
Didier Floriot
,
et al.
Journal of Computational Electronics , 2014, 13 (4)
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hal-01285693v1
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