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authFullName_s : Didier Floriot

Nonlinear RF caracterization and modelling of heterojonction bipolar transistors under pulsed conditions

Jean-Pierre Viaud , Raphaël Sommet , Jean-Pierre Teyssier , Didier Floriot , Raymond Quéré
24 th European Microwawe Conference - CANNES, 1994, Unknown, Unknown Region. pp.1610--1615
Communication dans un congrès hal-01280055v1

Characterization and modeling of bias dependent breakdown and self-heating in GaInP/GaAs power HBT to improve high power amplifier design

Sylvain Heckmann , Raphaël Sommet , Jean-Michel Nebus , Jean-Claude Jacquet , Didier Floriot , et al.
IEEE Transactions on Microwave Theory and Techniques, 2002, 50 (12), pp.2811--2819
Article dans une revue hal-01279572v1

Numerical simulation and characterization of trapping noise in InGaP-GaAs heterojunctions devices at high injection

Jean-Christophe Nallatamby , Khaled Abdelhadi , Jean-Claude Jacquet , Michel Prigent , Didier Floriot , et al.
Solid-State Electronics, 2013, 81, pp.35-44
Article dans une revue hal-00911139v1

Méthode rigoureuse de simulation du bruit GR assisté par piège dans les composants semi-conducteurs : Application à des TBH en technologie GaInP/GaAs

Khaled Abdelhadi , Ahmad Al Hajjar , Jean-Christophe Nallatamby , Jean-Claude Jacquet , Sylvain Delage , et al.
18èmes Journées Nationales Microondes, May 2013, Paris, France
Communication dans un congrès hal-00914669v1

CAD oriented design methods of frequency multipliers. Application to a Millimeterwave MMIC PHEMT tripler and a microwave HBT doubler

Béatrice Thibaud , Denis Barataud , Michel Campovecchio , Jean-Michel Nebus , Sylvie Tranchant , et al.
IEEE MTT-S, International Symposium on Microwave Theory and Techniques, Jun 1999, Anaheim, CA, United States. pp.1747-1750, ⟨10.1109/MWSYM.1999.780309⟩
Communication dans un congrès hal-01069754v1

A Comparison of 2-D Simulations and Measurements of Low Frequency Noise on InGaP/GaAs HBT Transistors at Low and High Level Injection

Khaled Abdelhadi , Ahmad Al Hajjar , Jean-Christophe Nallatamby , Jean-Claude Jacquet , Sylvain Delage , et al.
International Conference on Noise and Fluctuations, Jun 2013, Montpellier, France
Communication dans un congrès hal-00914665v1

Low-Frequency Noise Characterization in GaN HEMTs: Investigation of Deep Levels and Their Physical Properties

Nandha Kumar Subramani , Julien Couvidat , Ahmad Al Hajjar , Jean-Christophe Nallatamby , Didier Floriot , et al.
IEEE Electron Device Letters, 2017, 38 (8), pp.1109 - 1112. ⟨10.1109/LED.2017.2717539⟩
Article dans une revue hal-01661735v1

Wideband harmonically matched packaged GaN HEMTs with high PAE performances at S-band frequencies

Jérôme Chéron , Michel Campovecchio , Denis Barataud , Tibault Reveyrand , Michel Stanislawiak , et al.
International Journal of Microwave and Wireless Technologies, 2013, 5 (4), pp.437-445. ⟨10.1017/S1759078713000032⟩
Article dans une revue hal-00911156v1

An active pulsed RF and pulsed DC load-pull system for the characterization of H.B.T. power transistors used in coherent radar and communication systems

Caroline Arnaud , Denis Barataud , Jean-Michel Nebus , Jean-Pierre Teyssier , Jean-Pierre Villotte , et al.
IEEE Transactions on Microwave Theory and Techniques, 2000, 48 (12), pp.2625-2629. ⟨10.1109/22.899022⟩
Article dans une revue hal-01287615v1

Design of a 55 W Packaged GaN HEMT with 60% PAE by Internal Matching in S-Band.

Jérôme Chéron , Michel Campovecchio , Denis Barataud , Tibault Reveyrand , Sébastien Mons , et al.
Integrated Nonlinear Microwave and Millimetre-wave Circuits (INMMIC 2012), Sep 2012, Dublin, Germany. pp.1-3, ⟨10.1109/INMMIC.2012.6331923⟩
Communication dans un congrès hal-00793469v1

Electrical modeling of packaged GaN HEMT dedicated to internal power matching in S-band

Jérôme Chéron , Michel Campovecchio , Denis Barataud , Tibault Reveyrand , Michel Stanislawiak , et al.
International Journal of Microwave and Wireless Technologies, 2012, 4 (5), pp.495-503. ⟨10.1017/S1759078712000530⟩
Article dans une revue hal-00793353v1

Wideband Power Performance Evaluation of AlGaN/GaN PHEMTs

Sandra Demeyer , Audrey Martin , Michel Campovecchio , Didier Floriot , Raymond Quéré
Workshop on "Power Amplifier Design and Characterization" Hyper 2005, Mar 2005, Paris, France
Communication dans un congrès hal-01067140v1

A non-quasi-static model of GaInP/GaAs HBT for power applications

Jean-Philippe Fraysse , Didier Floriot , Philippe Auxemery , Michel Campovecchio , Raymond Quéré , et al.
IEEE MTT-S International Microwave Symposium on Microwave Theory and Techniques, Jun 1997, Denver, CO, United States. pp. 379-382, ⟨10.1109/MWSYM.1997.602813⟩
Communication dans un congrès hal-01067827v1

Modelling of a 4-18GHz 6W flip-chip integrated power amplifier based on GaN HEMTs technology

Sandra Demeyer , Audrey Philippon , Michel Campovecchio , Christophe Charbonniaud , Stéphane Piotrowicz , et al.
35th European Microwave Conference, Oct 2005, Paris, France. pp. 1603-1606, ⟨10.1109/EUMC.2005.1610261⟩
Communication dans un congrès hal-01070012v1

A design method for high efficiency class F HBT amplifiers

Alain Mallet , Thierry Peyretaillade , Raphaël Sommet , Didier Floriot , Sylvain Delage , et al.
Microwave Symposium Digest, 1996., IEEE MTT-S International, 1996, Unknown, Unknown Region. pp.855--858 vol.2
Communication dans un congrès hal-01279783v1

Comprehensive analysis of GR noise in InGaP–GaAs HBT by physics-based simulation and low frequency characterization

Jean-Christophe Nallatamby , Sylvain Laurent , Michel Prigent , Jean-Claude Jacquet , Didier Floriot , et al.
Journal of Computational Electronics, 2014, 13 (4)
Article dans une revue hal-01285693v1