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Study of Microwave Performances of AlInN/GaN and AlGaN/GaN HEMT Devices up to 18GHz18th European Workshop on Heterostructure Technology (HETECH 2009), Nov 2009, Ulm, Germany
Communication dans un congrès
hal-00758953v1
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State of the Art 58W, 38% PAE X-Band AlGaN/GaN HEMTs microstrip MMIC AmplifiersIEEE Compound Semiconductor IC Symposium CSICS 2008, Oct 2008, United States. pp 1- 4
Communication dans un congrès
hal-00918252v1
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