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Wideband 50W Packaged GaN HEMT With Over 60% PAE Through Internal Harmonic Control in S-BandIEEE MTT-S Digest, IMS 2012, Jun 2012, Montréal -Canada, United States. pp.TH2D-2
Communication dans un congrès
hal-00707898v1
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Mise en oeuvre d'un boîtier d'un transistor GaN optimisé haut rendement (70% PAE) et large bande (1GHz) en bande S17eme Journées Nationales Micro-ondes (JNM), May 2011, Brest, France. Papier 6E13
Communication dans un congrès
hal-00700764v1
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Measurements for compact and behavioral models of GaN transistorsWorkshop "Circuits and GaN Technologies", Microwave & RF, Apr 2012, Versailles, France
Communication dans un congrès
hal-00911568v1
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Over 70% PAE packaged GaN HEMT through wideband internal matching at second harmonic in S-bandElectronics Letters, 2012, 48 (13), pp.770-772. ⟨10.1049/el.2012.1654⟩
Article dans une revue
hal-00793351v1
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Design of HEMT GaN power amplifiers with wideband control of 2nd harmonic impedances in S-Band5th European Conference on Microwave Integrated Circuits (EuMIC), Sep 2010, Paris, France. pp.1-4
Communication dans un congrès
hal-00547740v1
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Wideband harmonically matched packaged GaN HEMTs with high PAE performances at S-band frequenciesInternational Journal of Microwave and Wireless Technologies, 2013, 5 (4), pp.437-445. ⟨10.1017/S1759078713000032⟩
Article dans une revue
hal-00911156v1
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High-Efficiency Power Amplifier MMICs in 100 nm GaN Technology at Ka-band frequencies8th European Microwave Integrated Circuits Conference (EuMIC), European Microwave Week (EuMW), Oct 2013, Nuremberg, Germany. pp.492-495
Communication dans un congrès
hal-00911618v1
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Wideband harmonic control of high efficiency high power GaN amplifiers in S-Band and power packaging issuesMOD Round Table Workshop on GaN Component Technologies, ESTEC, Sep 2010, Noordwijk, Netherlands. pp.2-5
Communication dans un congrès
hal-00607002v1
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High-Gain Over 30% PAE Power Amplifier MMICs in 100 nm GaN Technology at Ka-Band Frequencies 45th European Microwave Conference - 10th European Microwave Integrated Circuits Conference, Sep 2015, Paris, France. pp 262-265, ⟨10.1109/EuMIC.2015.7345119⟩
Communication dans un congrès
hal-01279001v1
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Design of a 55 W Packaged GaN HEMT with 60% PAE by Internal Matching in S-Band.Integrated Nonlinear Microwave and Millimetre-wave Circuits (INMMIC 2012), Sep 2012, Dublin, Germany. pp.1-3, ⟨10.1109/INMMIC.2012.6331923⟩
Communication dans un congrès
hal-00793469v1
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Electrical modeling of packaged GaN HEMT dedicated to internal power matching in S-bandInternational Journal of Microwave and Wireless Technologies, 2012, 4 (5), pp.495-503. ⟨10.1017/S1759078712000530⟩
Article dans une revue
hal-00793353v1
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Harmonic Control In Package of Power GaN Transistors for High Efficiency and Wideband Performances in S-Band41st European Microwave Conference, EuMW 2011, Oct 2011, Manshester, United Kingdom. pp.1111-1114
Communication dans un congrès
hal-00701038v1
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Design and Modeling Method of Package for Power GaN HEMTs to Limit the Input Matching SensitivityIntegrated Nonlinear Microwave and Millimetre-wave Circuits (INMMIC 2011, Apr 2011, Vienne, Austria. pp.81-84, ⟨10.1109/INMMIC.2011.5773327⟩
Communication dans un congrès
hal-00660836v1
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