Filtrer vos résultats
- 3
- 2
- 1
- 3
- 1
- 1
- 1
- 3
- 2
- 2
- 1
- 1
- 3
- 3
- 1
- 1
- 1
- 1
- 1
- 1
- 1
- 1
- 1
- 1
- 1
- 1
- 1
- 1
- 1
- 1
|
|
triés par
|
Investigation of Fast and Slow Charge Trapping Mechanisms of GaN/AlGaN HEMTs through Pulsed I-V Measurements and the Associated New Trap Model2018 International Microwave Symposium (IMS2018), IEEE, Jun 2018, Philadelphia, United States. ⟨10.1109/MWSYM.2018.8439142⟩
Communication dans un congrès
hal-01828885v1
|
|||
Measurements for compact and behavioral models of GaN transistorsWorkshop "Circuits and GaN Technologies", Microwave & RF, Apr 2012, Versailles, France
Communication dans un congrès
hal-00911568v1
|
|||
|
Large-signal characterization of microwave power devicesInternational Journal of RF and Microwave Computer-Aided Engineering, 2005, Special Issue: Microwave Power Amplifier Modeling and Design, 15 (5), pp.479-490. ⟨10.1002/mmce.20113⟩
Article dans une revue
hal-01287619v1
|