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Article Dans Une Revue World Journal of Engineering Année : 2011

Influence of the V/II ratio on the growth of groupe III nitride quantum dots deposited on silicon substrate by plasma enhanced chemical vapor deposition

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Matériaux
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Dates et versions

hal-00942418 , version 1 (05-02-2014)

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  • HAL Id : hal-00942418 , version 1

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Z. Bouchkour, Pascal Tristant, Christelle Dublanche-Tixier, Cédric Jaoul, Xavier Landreau, et al.. Influence of the V/II ratio on the growth of groupe III nitride quantum dots deposited on silicon substrate by plasma enhanced chemical vapor deposition. World Journal of Engineering, 2011, Proceedings of the 19th Annual International Conference on Composites or Nano-Engeneering (ICCE-19), (Issue supplement), pp.143. ⟨hal-00942418⟩
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