Out-of-Plane and Inline RF Switches based on Ge2Sb2Te5 Phase-Change Material - Université de Limoges Accéder directement au contenu
Communication Dans Un Congrès Année : 2014

Out-of-Plane and Inline RF Switches based on Ge2Sb2Te5 Phase-Change Material

Aurelian Crunteanu
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Amine Mennai
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Cyril Guines
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Damien Passerieux
Pierre Blondy
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Résumé

We present the fabrication and characterization of novel RF switches based on Ge2Sb2Te5 (GST) phase change material. Such ohmic devices show non-volatile switching with resistivity changes up to 105 as the material is transforming between the amorphous and the crystalline state by either applying a voltage pulse or direct heating. We investigated the RF properties and power handling of such devices in two configurations: out-of-plane (GST material between two electrodes) and inline switches. For a directly heated 10-mu length inline switch we measured an on-state resistance of 7 Ohm, and an off-state capacitance and resistance of 13.7 fF and 6.47 MOhm, respectively, resulting in a cut-off frequency of ~1.6 THz.
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Dates et versions

hal-00956911 , version 1 (07-03-2014)

Identifiants

  • HAL Id : hal-00956911 , version 1

Citer

Aurelian Crunteanu, Amine Mennai, Cyril Guines, Damien Passerieux, Pierre Blondy. Out-of-Plane and Inline RF Switches based on Ge2Sb2Te5 Phase-Change Material. International Microwave Symposium 2014, IEEE-MTT, Mar 2014, Tampa Bay, FL, United States. paper TU4A-2. ⟨hal-00956911⟩

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