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Communication Dans Un Congrès Année : 2016

Non-linear electro-thermal AlGaN/GaN model including large-signal dynamic thermal-trapping effects

Denis Barataud
Agostino Benvegnu
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Olivier Jardel
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Sylvain Laurent
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Raymond Quéré

Résumé

This paper presents a non-linear electro-thermal AlGaN/GaN model for CAD application with a new additive thermal-trap model to take into account the dynamic behavior of trap states and their associated temperature variation. The thermal-trap model is extracted through low-frequency small-signal CW S-parameter measurements and large-signal pulsed-RF measurements at different temperatures. This thermal-trap model allows accurately predicting the physical temperature activation of traps and also the thermal signature of traps. It is also demonstrated that extrapolation of trap model parameters by stretched multi-exponential function of drain current transient measurements during pulsed-RF excitations allows deeply improving the envelope simulations.
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Dates et versions

hal-01706872 , version 1 (12-02-2018)

Identifiants

Citer

Denis Barataud, Agostino Benvegnu, Olivier Jardel, Sylvain Laurent, Matteo Meneghini, et al.. Non-linear electro-thermal AlGaN/GaN model including large-signal dynamic thermal-trapping effects. 2016 IEEE/MTT-S International Microwave Symposium (IMS), May 2016, San Francisco, France. ⟨10.1109/MWSYM.2016.7540040⟩. ⟨hal-01706872⟩
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