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Communication Dans Un Congrès Année : 2011

Influence of the V/III ratio on the growth of group III nitride quantum dots deposited on silicon substrate by plasma enhanced chemical vapor deposition

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Matériaux
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hal-00944752 , version 1 (11-02-2014)

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  • HAL Id : hal-00944752 , version 1

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Z. Bouchkour, Pascal Tristant, Christelle Dublanche-Tixier, Cédric Jaoul, Xavier Landreau, et al.. Influence of the V/III ratio on the growth of group III nitride quantum dots deposited on silicon substrate by plasma enhanced chemical vapor deposition. 19th Annual International Conference on Composites or Nano-Engeneering (ICCE-19), Jul 2011, Shanghaï, China. pp.143. ⟨hal-00944752⟩
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